PART |
Description |
Maker |
BLD6G22LS-50112 BLD6G22L-50112 |
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
|
NXP Semiconductors N.V.
|
SKY77456 |
Front-End Module for LTE / EUTRAN Band IV / X (Tx 1710-1770 MHz), (Rx 2110-2170 MHz)
|
Skyworks Solutions Inc.
|
SKY77455 |
Front-End Module for LTE / EUTRAN Band I (Tx 1920-1980 MHz), (Rx 2110-2170 MHz)
|
Skyworks Solutions Inc.
|
MHPA21010 |
MHPA21010 2110-2170 MHz, 10 W, 23.7 dB RF High Power LDMOS Amplifier
|
Motorola
|
PTF210101M |
High Power RF LDMOS Field Effect Transistor 10 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
PTFA212002E |
Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110-2170 MHz
|
Infineon Technologies AG
|
MAPLST2122-090CF |
RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 90W, 28V
|
Tyco Electronics
|
PTFB211803EL PTFB211803FL |
Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
PTFA212001E PTFA212001F |
Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
PTFB213208FVV1R250 |
Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ?2170 MHz
|
Infineon Technologies A...
|
UMIL100A |
UHF 225-400 MHz, Class C, Common Emitter; P(out) (W): 100; P(in) (W): 16; Gain (dB): 8; Vcc (V): 28; Cob (pF): 120; fO (MHz): 0; Case Style: 55JU-2 UHF BAND, Si, NPN, RF POWER TRANSISTOR 100 Watts / 28 Volts / Class AB Defcom 225 - 400 MHz 100 Watts, 28 Volts, Class AB Defcom 225 - 400 MHz
|
Microsemi, Corp. Electronic Theatre Controls, Inc. ETC GHZTECH[GHz Technology]
|